IndiumV3, Main, Repository, bibRecord, 008776

Native-defect-controlled n-type conductivity in InN

Identifieur interne : 008776 ( Main/Repository ); précédent : 008775; suivant : 008777

Native-defect-controlled n-type conductivity in InN

Auteurs : RBID : Pascal:06-0222366

Descripteurs français

Pascal (Inist)
- Formation défaut, Conductivité type n, Effet rayonnement, Dopage, Densité porteur charge, Mobilité électron, Interaction électron défaut, Ionisation, Indium nitrure, InN, 7220E.
Wicri :
- concept : Dopage.

English descriptors

KwdEn :
- Carrier density, Defect formation, Doping, Electron mobility, Electron-defect interactions, Indium nitrides, Ionization, N type conductivity, Radiation effects.

Abstract

High-energy particle irradiation has been shown previously to be a method for n-type doping of InN. Here we irradiated InN with H⁺ and He⁺ particles to study the dependence of the electron mobility on electron concentrations varying from mid-10¹⁸ to mid-10²⁰ cm^-3. We find that the electron mobility is limited by scattering from the ionized defects created by irradiation, resulting in a strong correlation between mobility and electron concentration. Furthermore, our calculations suggest that the radiation-induced defects may be triply charged donors.

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Links to Exploration step

Pascal:06-0222366

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Native-defect-controlled n-type conductivity in InN</title>
<author><name sortKey="Jones, R E" uniqKey="Jones R">R. E. Jones</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Rd., MS 02R200</s1>
<s2>Berkeley, CA 94720</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<placeName><region type="state">État du Mississippi</region>
</placeName>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Materials Science and Engineering, University of California</s1>
<s2>Berkeley, CA</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Berkeley, CA</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Li, S X" uniqKey="Li S">S. X. Li</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Rd., MS 02R200</s1>
<s2>Berkeley, CA 94720</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<placeName><region type="state">État du Mississippi</region>
</placeName>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Materials Science and Engineering, University of California</s1>
<s2>Berkeley, CA</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Berkeley, CA</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Hsu, L" uniqKey="Hsu L">L. Hsu</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>General College, University of Minnesota</s1>
<s2>Minneapolis, MN</s2>
<s3>USA</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Minneapolis, MN</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Yu, K M" uniqKey="Yu K">K. M. Yu</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Rd., MS 02R200</s1>
<s2>Berkeley, CA 94720</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<placeName><region type="state">État du Mississippi</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Walukiewicz, W" uniqKey="Walukiewicz W">W. Walukiewicz</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Rd., MS 02R200</s1>
<s2>Berkeley, CA 94720</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<placeName><region type="state">État du Mississippi</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Liliental Weber, Z" uniqKey="Liliental Weber Z">Z. Liliental-Weber</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Rd., MS 02R200</s1>
<s2>Berkeley, CA 94720</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<placeName><region type="state">État du Mississippi</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Ager, J W Iii" uniqKey="Ager J">J. W. Iii Ager</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Rd., MS 02R200</s1>
<s2>Berkeley, CA 94720</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<placeName><region type="state">État du Mississippi</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Haller, E E" uniqKey="Haller E">E. E. Haller</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Rd., MS 02R200</s1>
<s2>Berkeley, CA 94720</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<placeName><region type="state">État du Mississippi</region>
</placeName>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Materials Science and Engineering, University of California</s1>
<s2>Berkeley, CA</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Berkeley, CA</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Lu, H" uniqKey="Lu H">H. Lu</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Department of Electrical and Computer Engineering, Cornell University</s1>
<s2>Ithaca, NY</s2>
<s3>USA</s3>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Ithaca, NY</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Schaff, W J" uniqKey="Schaff W">W. J. Schaff</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Department of Electrical and Computer Engineering, Cornell University</s1>
<s2>Ithaca, NY</s2>
<s3>USA</s3>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Ithaca, NY</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">06-0222366</idno>
<date when="2006">2006</date>
<idno type="stanalyst">PASCAL 06-0222366 INIST</idno>
<idno type="RBID">Pascal:06-0222366</idno>
<idno type="wicri:Area/Main/Corpus">009103</idno>
<idno type="wicri:Area/Main/Repository">008776</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0921-4526</idno>
<title level="j" type="abbreviated">Physica, B Condens. matter</title>
<title level="j" type="main">Physica. B, Condensed matter</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Carrier density</term>
<term>Defect formation</term>
<term>Doping</term>
<term>Electron mobility</term>
<term>Electron-defect interactions</term>
<term>Indium nitrides</term>
<term>Ionization</term>
<term>N type conductivity</term>
<term>Radiation effects</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Formation défaut</term>
<term>Conductivité type n</term>
<term>Effet rayonnement</term>
<term>Dopage</term>
<term>Densité porteur charge</term>
<term>Mobilité électron</term>
<term>Interaction électron défaut</term>
<term>Ionisation</term>
<term>Indium nitrure</term>
<term>InN</term>
<term>7220E</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">High-energy particle irradiation has been shown previously to be a method for n-type doping of InN. Here we irradiated InN with H<sup>+</sup>
 and He<sup>+</sup>
 particles to study the dependence of the electron mobility on electron concentrations varying from mid-10<sup>18</sup>
 to mid-10<sup>20</sup>
 cm<sup>-3</sup>
. We find that the electron mobility is limited by scattering from the ionized defects created by irradiation, resulting in a strong correlation between mobility and electron concentration. Furthermore, our calculations suggest that the radiation-induced defects may be triply charged donors.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0921-4526</s0>
</fA01>
<fA03 i2="1"><s0>Physica, B Condens. matter</s0>
</fA03>
<fA05><s2>376-77</s2>
</fA05>
<fA08 i1="01" i2="1" l="ENG"><s1>Native-defect-controlled n-type conductivity in InN</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of the 23rd international conference on defects in semiconductors, ICDS-23, Awaji Island, Japan, 27-29 July 2005</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>JONES (R. E.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>LI (S. X.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>HSU (L.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>YU (K. M.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>WALUKIEWICZ (W.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>LILIENTAL-WEBER (Z.)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>AGER (J. W. III)</s1>
</fA11>
<fA11 i1="08" i2="1"><s1>HALLER (E. E.)</s1>
</fA11>
<fA11 i1="09" i2="1"><s1>LU (H.)</s1>
</fA11>
<fA11 i1="10" i2="1"><s1>SCHAFF (W. J.)</s1>
</fA11>
<fA12 i1="01" i2="1"><s1>OSHIYAMA (A.)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="02" i2="1"><s1>MAEDA (K.)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="03" i2="1"><s1>ITOH (K. M.)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="04" i2="1"><s1>KATAYAMA-YOSHIDA (H.)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Rd., MS 02R200</s1>
<s2>Berkeley, CA 94720</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Department of Materials Science and Engineering, University of California</s1>
<s2>Berkeley, CA</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>8 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>General College, University of Minnesota</s1>
<s2>Minneapolis, MN</s2>
<s3>USA</s3>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="04"><s1>Department of Electrical and Computer Engineering, Cornell University</s1>
<s2>Ithaca, NY</s2>
<s3>USA</s3>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</fA14>
<fA15 i1="01"><s1>University of Tsukuba</s1>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
</fA15>
<fA15 i1="02"><s1>University of Tokyo</s1>
<s3>JPN</s3>
<sZ>2 aut.</sZ>
</fA15>
<fA15 i1="03"><s1>Keio University</s1>
<s3>JPN</s3>
<sZ>3 aut.</sZ>
</fA15>
<fA15 i1="04"><s1>Osaka University</s1>
<s3>JPN</s3>
<sZ>4 aut.</sZ>
</fA15>
<fA20><s1>436-439</s1>
</fA20>
<fA21><s1>2006</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>145B</s2>
<s5>354000156839571080</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2006 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>15 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>06-0222366</s0>
</fA47>
<fA60><s1>P</s1>
<s2>C</s2>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Physica. B, Condensed matter</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>High-energy particle irradiation has been shown previously to be a method for n-type doping of InN. Here we irradiated InN with H<sup>+</sup>
 and He<sup>+</sup>
 particles to study the dependence of the electron mobility on electron concentrations varying from mid-10<sup>18</sup>
 to mid-10<sup>20</sup>
 cm<sup>-3</sup>
. We find that the electron mobility is limited by scattering from the ionized defects created by irradiation, resulting in a strong correlation between mobility and electron concentration. Furthermore, our calculations suggest that the radiation-induced defects may be triply charged donors.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70B20E</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Formation défaut</s0>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Defect formation</s0>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Formación defecto</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Conductivité type n</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>N type conductivity</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Conductividad tipo n</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Effet rayonnement</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Radiation effects</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Dopage</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Doping</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Doping</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Densité porteur charge</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Carrier density</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Mobilité électron</s0>
<s5>07</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Electron mobility</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Interaction électron défaut</s0>
<s5>08</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Electron-defect interactions</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Ionisation</s0>
<s5>09</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Ionization</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Indium nitrure</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Indium nitrides</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>InN</s0>
<s4>INC</s4>
<s5>53</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>7220E</s0>
<s4>INC</s4>
<s5>60</s5>
</fC03>
<fN21><s1>142</s1>
</fN21>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>ICDS : international conference on defects in semiconductors</s1>
<s2>23</s2>
<s3>Awaji Island JPN</s3>
<s4>2005-07-24</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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Native-defect-controlled n-type conductivity in InN

Native-defect-controlled n-type conductivity in InN

Descripteurs français

English descriptors

Abstract

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